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| 2SK1838 L , 2SK1838 S Silicon N Channel MOS FET Application DPAK-1 4 12 3 12 3 4 High speed power switching Features S Type L Type 1. 1. Gate Gate 2. 2. Drain Drain 3. 3. Source Source 4. 4. Drain Drain * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter 2, 4 1 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 1 2 1 10 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1838 L , 2SK1838 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 5.5 10 50 3.0 8.0 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 0.5 A VGS = 10 V * ID = 0.5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 0.5 A VGS = 10 V RL = 60 -------------------------------------------------------------------------------------- 0.3 0.5 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 60 30 5 5 6 10 4.5 0.96 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 1 A, VGS = 0 IF = 1 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 160 -- ns -------------------------------------------------------------------------------------- 2SK1838 L , 2SK1838 S Power vs. Temperature Derating 20 Maximum Safe Operation Area 10 Pch (W) 3 15 10 Drain Current I D (A) 1 DC Channel Dissipation O PW pe ra 10 = 1 0 s s 10 (T m s 10 tio m c 0.3 0.1 Operation in this area is limited by R DS (on) n s (1 25 = sh C ot ) ) 5 0.03 Ta = 25C 0 50 100 Case Temperature 150 Tc (C) 200 0.01 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 1.0 8V 10 V 0.8 Pulse Test Drain Current ID (A) Drain Current I D (A) 0.6 4.5 V 0.4 4V 0.2 V GS = 3.5 V 0 2 4 6 8 10 0 0.2 0.6 5V 0.8 6V 1.0 Typical Transfer Characteristics Pulse Test V DS = 10 V 0.4 Tc = 75C 25C - 25C 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 2SK1838 L , 2SK1838 S Drain-Source Saturation Voltage vs. Gate-Source Voltage 5 Pulse Test Static Drain-Source on State Resistance R DS (on) ( ) 4 50 Static Drain-Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) 20 10 5 Pulse Test V GS = 10 V 3 0.5 A 2 0.2 A 1 ID = 0.1 A 2 1 0 4 8 12 16 20 0.5 0.02 0.05 0.1 0.2 0.5 1 2 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain-Source on State Resistance vs. Temperature 25 5 Forward Transfer Admittance vs. Drain Current Pulse Test VDS = 10 V Forward Transfer Admittance |y fs | (S) 2 1 Tc = - 25C 0.5 25C 75C 0.2 0.1 0.05 0.02 20 Static Drain-Source on State Resistance R DS (on) ( ) Pulse Test V GS = 10 V 15 I D = 0.5 A 10 0.1 A 5 0.2 A 0 - 40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 Case Temperature Tc (C) Drain Current I D (A) 2SK1838 L , 2SK1838 S Body-Drain Diode Reverse Recovery Time 1000 500 1000 Typical Capacitance vs. Drain-Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) Capacitance C (pF) 200 100 50 di / dt = 100 A / s V GS = 0, Ta = 25C 20 10 0.05 100 Ciss Coss 10 Crss 1 0 0.1 0.2 0.5 1 2 5 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Sourve Voltage VDS (V) Dynamic Input Characteristics 500 I D = 0.5 A 16 V GS 300 VDD = 200 V 200 V DS 100 V 50 V 8 12 Gate to Source Voltage VGS (V) 400 20 100 50 Switching Characteristics . V GS = 10 V,V DD = 30 V . PW = 2 s, duty 1 % Drain to Source Voltage VDS (V) Switching Time t (ns) tf 20 10 td (on) 5 tr 2 td (off) 100 VDD = 200 V 100 V 50 V 4 0 4 8 12 16 20 0 1 0.05 0.1 0.2 0.5 1 2 5 Gate Charge Qg (nc) Drain Current I D (A) 2SK1838 L , 2SK1838 S Reverse Drain Current vs. Source to Drain Voltage 1.0 Pulse Test Reverse Drain Current IDR (A) 0.8 0.6 0.4 0.2 VGS = 10 V 0, - 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 1s hot Pul se Tc = 25C ch - c(t) = s(t) . ch - c ch - c = 12.5C / W. Tc = 25C PW D= T P DM T PW 0.01 100 1m 10 m Pulse Width PW (S) 100 m 1 10 2SK1838 L , 2SK1838 S Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin 10 V 50 Vin Vout 10 % 10 % 10 % . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf |
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